STTH8T06 datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STTH8T06

4/9

DocID023406 Rev 3

Figure 5. Reverse recovery time versus dIF/dt

(typical values)

Figure 6. Reverse recovery charges versus

dIF/dt (typical values)

RR(ns)

100

200

300

400

500

600

700

800

900

1000

VR=400 V

Tj=125 °C

IF=0.5 x IF(AV)

IF=IF(AV)

IF=2 x IF(AV)

dIF/dt(A/µs)

RR(nC)

dIF/dt(A/µs)

100

200

300

400

500

600

700

800

900

1000

VR=400 V

Tj=125 °C

IF=0.5 x IF(AV)

IF=IF(AV)

IF=2 x IF(AV)

Figure 7. Reverse recovery softness factor

versus dIF/dt (typical values)

Figure 8. Relative variations of dynamic

parameters versus junction temperature

0.0

0.5

1.0

1.5

2.0

100

200

300

400

500

600

700

800

900

1000

FACTOR

IF=IF(AV)

VR=400 V

Tj=125 °C

dIF/dt(A/µs)

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

100

125

Tj(°C)

IF=IF(AV)

VR=400 V

Reference: Tj=125 °C

SFACTOR

IRM

QRR

Figure 9. Junction capacitance versus reverse

voltage applied (typical values)

Figure 10. Relative variation of non-repetitive

peak surge forward current versus pulse

duration

C(pF)

100

1000

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

R (V)

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.1

1.0

10.0

(t )/I

(10ms)

FSM

t (ms)

sinusoidal waveform

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