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STTH1512-Y Datasheet(PDF) 2 Page - STMicroelectronics |
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STTH1512-Y Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics STTH1512-Y 2/9 DocID024059 Rev 1 1 Characteristics To evaluate the conduction losses use the following equation: P = 1.4 x IF(AV) + 0.027 IF 2 (RMS) Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1200 V IF(RMS) Forward rms current D2PAK 50 A IF(AV) Average forward current, δ = 0.5 D2PAK Tc = 130 °C 15 A IFRM Repetitive peak forward current tp = 5 µs, F = 5 kHz square 200 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 200 A Tstg Storage temperature range -65 to + 175 °C Tj Operating junction temperature range -40 to + 175 °C Table 3. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case D2PAK 1.3 °C/W Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 5 ms, δ < 2% Reverse leakage current Tj = 25 °C VR = VRRM 15 µA Tj = 125 °C 10 100 VF (2) 2. Pulse test: tp = 380 µs, δ < 2% Forward voltage drop Tj = 25 °C IF = 15 A 2.10 V Tj = 125 °C 1.25 1.90 Tj = 150 °C 1.20 1.80 |
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