STTH1512-Y datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STTH1512-Y

4/9

DocID024059 Rev 1

Figure 5. Reverse recovery time versus

dIF/dt (typical values)

Figure 6. Reverse recovery charge versus dIF/dt

(typical values)

100

150

200

250

300

350

400

450

500

550

600

100

150

200

250

300

350

400

450

500

t(ns)

dI /dt(A/µs)

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

V =600V

T =125°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

100

150

200

250

300

350

400

450

500

Q (µC)

I =2 x I

FF(AV)

I =0.5 x I

F(AV)

I=I

F(AV)

V =600V

T =125°C

dI /dt(A/µs)

Figure 7. Softness factor versus

dIF/dt (typical values)

Figure 8. Relative variations of dynamic

parameters versus junction temperature

0.5

1.0

1.5

2.0

2.5

3.0

100

150

200

250

300

350

400

450

500

S factor

2xI

T =125°C

FF(AV)

≤

V =600V

dI /dt(A/µs)

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

100

125

IRM

QRR

S factor

T (°C)

I=I

Reference: T =125°C

F(AV)

V =600V

trr

Figure 9. Transient peak forward voltage versus

dIF/dt (typical values)

Figure 10. Forward recovery time versus dIF/dt

(typical values)

100

200

300

400

500

V(V)

dI /dt(A/µs)

I=I

T =125°C

FF(AV)

100

200

300

400

500

600

700

800

100

200

300

400

500

t(ns)

dI /dt(A/µs)

I=I

T =125°C

F(AV)

=1.5 x V max.

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