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STDLED627 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STDLED627
Description  N-channel 620 V, 0.95 Ω, 7.0 A Power MOSFET in D2PAK and in DPAK
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STDLED627 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID025173 Rev 1
3/18
STBLED627, STDLED627
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK
DPAK
VDS
Drain-source voltage
620
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
7.0
A
ID
Drain current (continuous) at TC = 100 °C
4.0
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
28
A
PTOT
Total dissipation at TC = 25 °C
90
W
IAR
(2)
2.
Pulse width limited by Tj max.
Avalanche current, repetitive or not-repetitive
5.5
A
EAS
(3)
3.
Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Single pulse avalanche energy
140
mJ
ESD
Gate-source human body model
(R =1.5 k
Ω, C = 100 pF)
2.5
kV
dv/dt(4)
4.
ISD ≤ 5.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS.
Peak diode recovery voltage slope
12
V/ns
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3. Thermal data
Symbol
Parameter
D²PAK
DPAK
Unit
Rthj-case Thermal resistance junction-case max.
1.39
°C/W
Rthj-pcb
(1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu.
Thermal resistance junction-pcb max.
30
50
°C/W



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