STDLED627 datasheet(4/18 Pages) STMICROELECTRONICS

4 / 18 page

Electrical characteristics

STBLED627, STDLED627

4/18

DocID025173 Rev 1

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

620

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 620 V

VDS = 620 V, TC = 125 °C

0.8

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 9

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3.6

4.5

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 2.8 A

0.95

1.2

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

-890

Coss

Output capacitance

110

Crss

Reverse transfer

capacitance

-18

Coss(er)

(1)

It is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Equivalent output

capacitance energy

VGS = 0, VDS = 0 to 480 V

-28

Coss(tr)

(2)

It is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS

increases from 0 to 80% VDSS.

Equivalent output

capacitance time

-63

Intrinsic gate

resistance

f = 1 MHz open drain

3.5

Total gate charge

VDD = 496 V, ID = 5.5 A,

VGS = 10 V

(see Figure 18)

-35

Qgs

Gate-source charge

4.5

Qgd

Gate-drain charge

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