STF42N60M2-EP datasheet(3/16 Pages) STMICROELECTRONICS

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STF42N60M2-EP, STFW42N60M2-EP

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220FP

TO-3PF

VGS

Gate-source voltage

± 25

(1)

Limited by maximum junction temperature

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

IDM

(1),(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

136

PTOT

Total dissipation at TC = 25 °C

dv/dt (3)

ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.

Peak diode recovery voltage slope

V/ns

dv/dt(4)

VDS ≤ 480 V

MOSFET dv/dt ruggedness

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s; TC=25 °C)

2500

3500

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-220FP

TO-3PF

Rthj-case Thermal resistance junction-case max

3.13

2.00

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting

Tj =25°C, ID =IAR;VDD =50 V)

800

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