STF42N60M2-EP datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STF42N60M2-EP, STFW42N60M2-EP

4/16

DocID027376 Rev 1

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS =0 V, ID =1 mA

600

IDSS

Zero gate voltage

drain current

VGS =0 V, VDS =600 V

µA

VGS =0 V, VDS =600 V,

TC =125 °C

100

µA

IGSS

Gate-body leakage

current

VDS =0 V, VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 17 A

0.076

0.087

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 100 V,

f = 1 MHz

2370

Coss

Output capacitance

112

Crss

Reverse transfer

capacitance

-2.5

Coss eq.

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

454

Intrinsic gate

resistance

f = 1 MHz, ID = 0

4.5

Total gate charge

VDD = 480 V, ID = 34 A,

VGS = 10 V

(see Figure 18)

-55

Qgs

Gate-source charge

8.5

Qgd

Gate-drain charge

Table 7. Switching Energy

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

R(off)

Turn-off energy

(from 90% VGS to 0% ID)

VDD =400 V, ID = 2.5 A,

RG =4.7 Ω, VGS =10V

-13

µJ

VDD =400 V, ID = 5 A,

RG =4.7 Ω, VGS =10V

-14.5

µJ

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