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STL6P3LLH6 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL6P3LLH6 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() STL6P3LLH6 Electrical characteristics DocID023668 Rev 3 5/15 Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD Forward on voltage ISD = 6 A, VGS = 0 - 1.1 V trr Reverse recovery time ISD = 6 A, di/dt = 100 A/µs VDD = 16 V, Tj = 150 °C - 15 ns Qrr Reverse recovery charge - 6.5 nC IRRM Reverse recovery current - 0.9 A |
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