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STL7N6LF3 Datasheet(PDF) 3 Page - STMicroelectronics |
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STL7N6LF3 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() STL7N6LF3 Electrical ratings DocID027038 Rev 4 3/15 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at TC = 25 °C 20 A ID(1) Drain current (continuous) at Tc = 100 °C 16 A ID(2) Drain current (continuous) at Tpcb = 25 °C 6.5 A ID(2) Drain current (continuous) at Tpcb = 100 °C 4.6 A IDM(3),(2) Drain current (pulsed) 26 A PTOT(1) Total dissipation at TC = 25 °C 52 W PTOT(2) Total dissipation at Tpcb = 25°C 4.3 W IAV Not-repetitive avalanche current 6.5 A EAS(4) Single pulse avalanche energy 190 mJ Tj Operating junction temperature range -55 to 175 °C Tstg Storage temperature range Notes: (1) This value is rated according to Rthj-case (2) This value is rated according to Rthj-pcb (3) Pulse width limited by safe operating area. (4) Starting TJ= 25 °C, ID= 8 A, VDD= 25 V. Table 3: Thermal resitance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 2.9 °C/W Rthj-pcb(1) Thermal resistance junction-pcb 35 °C/W Notes: (1)When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s |
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