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STL7N6LF3 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL7N6LF3 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() STL7N6LF3 Electrical characteristics DocID027038 Rev 4 5/15 Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 6.5 A ISDM(1) Source-drain current (pulsed) - 26 A VSD(2) Forward on voltage IDS = 6.5 A, VGS = 0 V - 1.3 V trr Reverse recovery time ISD = 6.5 A, di/dt = 100 A/µs VDD = 48 V, Tj = 150 °C (see Figure 14: "Test circuit for inductive load switching and diode recovery times") - 24 ns Qrr Reverse recovery charge - 23.3 nC IRRM Reverse recovery current - 1.9 A Notes: (1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 μs, duty cycle 1.5 % |
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