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STGFW30V60DF Datasheet(PDF) 7 Page - STMicroelectronics |
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STGFW30V60DF Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 15 page ![]() DocID026149 Rev 1 7/15 STGFW30V60DF Electrical characteristics Figure 8. Transfer characteristics Figure 9. Diode VF vs. forward current Figure 10. Normalized VGE(th) vs junction temperature Figure 11. Normalized V(BR)CES vs. junction temperature Figure 12. Capacitance variations Figure 13. Gate charge vs. gate-emitter voltage IC 80 60 20 0 7 (A) 8 VGE(V) 40 Tj=175°C Tj=25°C Tj=-40°C 9 100 10 11 VCE = 10 V AM17417v1 VF 1.9 1.1 10 (A) 20 IF(A) 1.5 Tj=175°C Tj=25°C Tj=-40°C 30 2.3 40 50 60 AM17418v1 VGE(th) 0.8 0.6 -50 (norm) TC(°C) 0.7 0 0.9 1.0 50 100 150 VCE=VGE IC=1mA AM17419v1 V(BR)CES 1.1 0.9 -50 (norm) TC(°C) 1.0 0 50 100 150 IC=2mA AM17420v1 C(pF) 10 0.1 VCE(V) 1000 1 10 100 10000 Cies Coes Cres AM17421v1 VGE(V) 0 0 Qg(nC) 50 100 2 150 175 4 6 8 10 12 14 16 25 125 75 VCC = 480 V IC = 30 A AM17422v1 |
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