| Electronic Components Datasheet Search |
|
STGFW30V60DF Datasheet(PDF) 3 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STGFW30V60DF Datasheet(HTML) 3 Page - STMicroelectronics |
|
3 / 15 page ![]() DocID026149 Rev 1 3/15 STGFW30V60DF Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 60 A IC Continuous collector current at TC = 100 °C 30 A ICP (1) 1. Pulse width limited by maximum junction temperature. Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 60 A IF Continuous forward current at TC = 100 °C 30 A IFP (1) Pulsed forward current 120 A PTOT Total dissipation at TC = 25 °C 58 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; Tc = 25 °C) 3.5 kV TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature - 55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 2.6 °C/W RthJC Thermal resistance junction-case diode 3.4 °C/W RthJA Thermal resistance junction-ambient 50 °C/W |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |