STL12N3LLH5 datasheet(4/11 Pages) STMICROELECTRONICS

Part #	STL12N3LLH5

Description	N-channel 30 V, 0.0079 Ω, 12 A, PowerFLAT™(3.3 x 3.3) STripFET™ V Power MOSFET

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 11 page

Electrical characteristics

STL12N3LLH5

4/11

Doc ID 018551 Rev 1

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4.

On/off states

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID=250 µA, VGS=0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS=max. rating,

VDS=max. rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS=± 22 V

100

VGS(th)

Gate threshold voltage

VDS=VGS, ID=250 µA

2.5

RDS(on)

Static drain-source on

resistance

VGS=10 V, ID=6 A

VGS=4.5 V, ID=6 A

0.0079

0.0095

0.0090

0.011

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS=25 V, f=1 MHz, VGS=0

1500

295

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID=12 A

VGS=4.5 V

(see Figure 14)

4.7

Gate input resistance

f=1 MHz gate DC bias=0

Test signal level=20 mV

Open drain

0.5

1.5

2.5

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