STL13DP10F6 datasheet(1/14 Pages) STMICROELECTRONICS

Part #	STL13DP10F6

Description	Low gate drive power losses

PDF	14 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 14 page

This is information on a product in full production.

May 2014

DocID023936 Rev 2

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STL13DP10F6

Dual P-channel 100 V, 0.136

Ω typ., 3.3 A STripFET™ VI

DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• R

DS(on)

* Q

g

industry benchmark

• Extremely low on-resistance R

DS(on)

• High avalanche ruggedness

• Low gate drive power losses

Applications

• Switching applications

Description

This device is a dual P-channel Power MOSFET

developed using the 6

th

generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest R

DS(on)

in all packages.

PowerFLAT™ 5x6

double island

1

4

8

5

1

4

Order code

VDS

RDS(on) max.

ID

STL13DP10F6

100 V

0.18

Ω

3.3 A

Table 1. Device summary

Order code

Marking

Packages

Packaging

STL13DP10F6

13DP10F6

PowerFLAT™ 5x6 double island

Tape and reel

www.st.com

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