DocID023936 Rev 2

3/14

STL13DP10F6

Electrical ratings

14

1

Electrical ratings

Note:

For the P-channel Power MOSFET the actual polarity of the voltages and the current must

be reversed.

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DS

Drain-source voltage

100

V

V

GS

Gate-source voltage

± 20

V

I

D

(1)

1.

The value is rated according R

thj-c

Drain current (continuous) at T

C

= 25 °C

13

A

I

D

(1)

Drain current (continuous) at T

C

= 100 °C

7.3

A

I

D

(2)

2.

The value is rated according R

thj-pcb

Drain current (continuous) at T

pcb

= 25 °C

3.3

A

I

D

(2)

Drain current (continuous) at T

pcb

=100°C

2

A

I

DM

(2)

,

(3)

3.

Pulse width limited by safe operating area

Drain current (pulsed)

13.2

A

P

TOT

(1)

Total dissipation at T

C

= 25°C

62.5

W

P

TOT

(2)

Total dissipation at T

pcb

= 25°C

4

W

T

J

T

stg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

R

thj-case

Thermal resistance junction-case

2

°C/W

R

thj-pcb

(1)

1.

When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec

Thermal resistance junction-pcb

32

°C/W