DocID023936 Rev 2

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STL13DP10F6

Electrical characteristics

14

Note:

For the P-channel Power MOSFET the actual polarity of the voltages and the current must

be reversed.

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

Source-drain current

-

3.3

A

I

SDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

13.2

A

V

SD

(2)

2.

Pulsed: pulse duration=300μs, duty cycle 1.5%

Forward on voltage

I

SD

= 3.3 A, V

GS

=0

-1.1

V

t

rr

Reverse recovery time

I

SD

= 3.3 A,

di/dt = 100 A/μs,

V

DD

=80 V, T

j

=150 °C

-26.5

ns

Q

rr

Reverse recovery charge

-

36.5

nC

I

RRM

Reverse recovery current

-

2.7

A