STL18N65M2 datasheet(3/14 Pages) STMICROELECTRONICS

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DocID026078 Rev 3

3/14

STL18N65M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

(1)

The value is rated according to Rthj-case and limited by package

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

1.8

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

120

dv/dt (3)

ISD ≤ 8 A, di/dt ≤ 400 A/µs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

dv/dt (4)

VDS ≤ 520 V

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

2.2

°C/W

Rthj-amb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-amb max

°C/W

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