STL58N3LLH5 datasheet(4/16 Pages) STMICROELECTRONICS

Part #	STL58N3LLH5

Description	Automotive-grade N-channel 30 V, 0.0076 Ω typ., 56 A STripFET™ H5 Power MOSFET in a PowerFLAT™ 5x6 package

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 16 page

Electrical characteristics

STL58N3LLH5

4/16

DocID026773 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 250 µA

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 30 V,

µA

VGS = 0 V

VDS = 30 V, TC = 125 °C

µA

IGSS

Gate body leakage current

VDS = 0 V,

VGS =+22 / ˗20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source

on- resistance

VGS = 10 V, ID = 7.5 A

0.0076

0.009

Ω

VGS = 4.5 V, ID = 7.5 A

0.0099 0.0112

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =2 5 V, f = 1 MHz,

VGS =0 V

950

Coss

Output capacitance

193

Crss

Reverse transfer

capacitance

-27

Total gate charge

VDD = 15 V, ID =15 A,

VGS =4.5 V

(see Figure 14)

-6.5

Qgs

Gate-source charge

3.3

Qgd

Gate-drain charge

2.4

Gate input resistance

f= 1MHz,

gate DC Bias = 0,

test signal level = 20 mV,

ID =0 A

-1.7

2.5

Ω

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