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STL58N3LLH5 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL58N3LLH5 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() DocID026773 Rev 2 5/16 STL58N3LLH5 Electrical characteristics 16 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 15 V, ID = 7.5 A, RG =4.7 Ω, VGS =10V (see Figure 13) -10.8 - ns tr Rise time - 15.6 - ns td(off) Turn-off delay time - 14.2 - ns tf Fall time - 6 - ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current - 56 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 224 A VSD (2) 2. Pulsed: pulse duration= 300 µs, duty cycle 1.5% Forward on voltage ISD = 15 A, VGS =0 V - 1.1 V trr Reverse recovery time ISD = 15 A, di/dt = 100 A/µs, VDD =25V, TJ =150 °C -20 36 ns Qrr Reverse recovery charge - 10 18 nC IRRM Reverse recovery current - 1 A |
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