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STU3N45K3 Datasheet(PDF) 1 Page - STMicroelectronics |
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STU3N45K3 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() This is information on a product in full production. June 2013 DocID17206 Rev 3 1/14 STU3N45K3 N-channel 450 V - 3.3 Ω typ., 1.8 A Zener-protected SuperMESH3™ Power MOSFET in a IPAK package Datasheet - production data Figure 1. Internal schematic diagram Features • 100% avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener protected Applications • Switching applications Description This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. D(2, TAB) G(1) S(3) AM01476v1 IPAK 3 2 1 TAB Order code VDSS RDS(on) max ID Pw STU3N45K3 450 V < 4 Ω 1.8 A 27 W Table 1.Device summary Order code Marking Package Packaging STU3N45K3 3N45K3 IPAK Tube www.st.com |
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