STU3N45K3 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STU3N45K3

4/14

DocID17206 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4.On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

450

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3.75

4.5

RDS(on

Static drain-source on

resistance

VGS = 10 V, ID = 0.6 A

3.3

Table 5.Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

-164

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-3

Co(tr)

(1)

Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

VDS = 0 to 360 V, VGS = 0

-13

Co(er)

(2)

Coss eq. energy related is defined as a constant equivalent capacitance giving the same charging time as

Coss when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

-18

Intrinsic gate

resistance

f = 1 MHz open drain

Total gate charge

VDD = 360 V, ID = 1.8 A,

VGS = 10 V

(see Figure 16)

-9.5

Qgs

Gate-source charge

Qgd

Gate-drain charge

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