STW9NK95Z datasheet(3/12 Pages) STMICROELECTRONICS

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STW9NK95Z

Electrical ratings

3/12

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

950

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC=100 °C

4.41

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

160

Derating Factor

1.28

W/°C

Vesd(G-S)

G-S ESD (HBM C=100 pF, R=1.5 k

Ω)

4000

dv/dt(2)

ISD ≤ 7 A, di/dt ≤ 100 A/µs,VDD ≤ 80% V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.78

°C/W

Rthj-a

Thermal resistance junction-ambient max

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by TJ Max)

EAS

Single pulse avalanche energy (starting

TJ=25 °C, ID=IAS, VDD=50 V)

(see Figure 17)and (see Figure 18)

300

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