STW9NK95Z datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STW9NK95Z

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

950

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = max rating,

VDS = max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V, VDS = 0

µA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 100 µA

33.75

4.5

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 3.6 A

1.15

1.38

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS =15 V, ID = 3.6 A

5.7

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS = 0

2256

189

Coss eq

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0 to 760 V

Intrinsic gate resistance

f=1 MHz, open drain

1.6

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 760 V, ID = 7.2 A

VGS = 10 V

(see Figure 15)

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