© Semiconductor Components Industries, LLC, 1994

October, 2016 − Rev. 10

1

Publication Order Number:

MMBF170LT1/D

MMBF170L, NVBF170L

Power MOSFET

500 mA, 60 V, N−Channel SOT−23

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain−Source Voltage

60

Vdc

Drain−Gate Voltage

60

Vdc

Gate−Source Voltage

− Continuous

±20

±40

Vdc

Vpk

Drain Current − Continuous

− Pulsed

0.5

0.8

Adc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

Derate above 25°C

225

1.8

mW

mW/°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Junction and Storage Temperature

−55 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0  0.75  0.062 in.

3

1

2

N−Channel

SOT−23

CASE 318

STYLE 21

MARKING DIAGRAM

& PIN ASSIGNMENT

500 mA, 60 V

3

Drain

2 Source

Gate 1

www.onsemi.com

ORDERING INFORMATION

See detailed ordering and shipping information in the

package dimensions section on page 2 of this data sheet.

6Z MG

G

6Z

= Specific Device Code

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)