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AT-32032 Datasheet(PDF) 2 Page - Broadcom Corporation. |
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AT-32032 Datasheet(HTML) 2 Page - Broadcom Corporation. |
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2 / 14 page ![]() 2 Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. NF Noise Figure VCE = 2.7 V, IC = 5 mA f = 0.9 GHz f = 1.8 GHz dB 1.0 1.25 1.3 GA Associated Gain VCE = 2.7 V, IC = 5 mA f = 0.9 GHz f = 1.8 GHz dB 13.5 15.0 10.5 hFE Forward Current Transfer Ratio VCE = 2.7 V, IC = 5 mA – 70 300 ICBO Collector Cutoff Current VCB = 3 V μA 0.2 IEBO Emitter Cutoff Current VEB = 1 V μA 1.5 AT-32032 Characterization Information, TA = 25°C Symbol Parameters and Test Conditions Units Typ. P1dB Power at 1 dB Gain Compression (opt tuning) VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 13 G1dB Gain at 1 dB Gain Compression (opt tuning) VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dB 15.5 IP3 Output Third Order Intercept Point (opt tuning) VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 23 |S21|E2 Gain in 50 Ω System VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB 11.5 AT-32032 Absolute Maximum Ratings Symbol Parameter Units Absolute Maximum[1] VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V 11 VCEO Collector-Emitter Voltage V 5.5 IC Collector Current mA 40 PT Power Dissipation[2, 3] mW 200 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance [2]: qjc = 350°C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. TMOUNTING SURFACE = 25°C. 3. Derate at 2.86 mW/°C for TMOUNTING SURFACE > 80°C. |
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