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AT-32032 Datasheet(PDF) 2 Page - Broadcom Corporation.

Part # AT-32032
Description  Low Current, High Performance NPN Silicon Bipolar Transistor
PDF  14 Pages
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Manufacturer  BOARDCOM [Broadcom Corporation.]
Direct Link  http://www.broadcom.com
Logo BOARDCOM - Broadcom Corporation.

AT-32032 Datasheet(HTML) 2 Page - Broadcom Corporation.

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Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
NF
Noise Figure
VCE = 2.7 V, IC = 5 mA
f = 0.9 GHz
f = 1.8 GHz
dB
1.0
1.25
1.3
GA
Associated Gain
VCE = 2.7 V, IC = 5 mA
f = 0.9 GHz
f = 1.8 GHz
dB
13.5
15.0
10.5
hFE
Forward Current Transfer Ratio
VCE = 2.7 V, IC = 5 mA
–
70
300
ICBO
Collector Cutoff Current
VCB = 3 V
μA
0.2
IEBO
Emitter Cutoff Current
VEB = 1 V
μA
1.5
AT-32032 Characterization Information, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Typ.
P1dB
Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dBm
13
G1dB
Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dB
15.5
IP3
Output Third Order Intercept Point (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dBm
23
|S21|E2
Gain in 50
Ω System
VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz
dB
11.5
AT-32032 Absolute Maximum Ratings
Symbol
Parameter
Units
Absolute
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
11
VCEO
Collector-Emitter Voltage
V
5.5
IC
Collector Current
mA
40
PT
Power Dissipation[2, 3]
mW
200
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance [2]:
qjc = 350°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. TMOUNTING SURFACE = 25°C.
3. Derate at 2.86 mW/°C for TMOUNTING SURFACE
> 80°C.



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