MIPSZ2012D3R3 datasheet(11/48 Pages) STMICROELECTRONICS

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TS4621B

Electrical characteristics

Doc ID 022194 Rev 2

11/48

CMRR

Common mode rejection ratio

F = 1 kHz

, G = 0 dB, Vic = 200 mVpp

F = 20 Hz to 20 kHz

, G = 0 dB, Vic = 200 mVpp

Crosstalk

Channel separation

RL = 32 Ω + 15 Ω , G = 0 dB, F = 1 kHz, Po = 10 mW

RL = 10 kΩ, G = 0 dB, F = 1 kHz, Vout =1 Vrms

100

110

SNR

Signal-to-noise ratio, A-weighted, Vout = 1 Vrms, THD+N < 1%,

F = 1 kHz(1)

G = +4 dB

G = +0 dB

100

ONoise

Output noise voltage, A-weighted (1)

G = +4 dB

G = +0 dB

911

µVrms

Gain range with gain (dB) = 20 x log[(VoutL/R)/(InL/R+ - InL/R-)]

-60

Mute

InL/R+ - InL/R- = 1 Vrms

-80

Gain step size error

-0.5

+0.5

step-

size

Gain error (G = +4 dB)

-0.45

+0.42

Rindiff

Differential input impedance

Input impedance during wake-up phase (referred to ground)

Zout

Output impedance when CR1 = 00h (negative supply is ON and

amplifier output stages are OFF)(1)

F < 40 kHz

F = 6 MHz

F = 36 MHz

500

twu

Wake-up time(2)

tstby

Standby time

100

µs

tatk

Attack time. Setup time between low rail and high rail voltages

of internal step-down DC/DC converter

100

µs

tdcy

Decay time

Guaranteed by design and parameter correlation.

Refer to the application information in Section 4.2 on page 30.

Table 6.

Electrical characteristics of the amplifier

for VCC = +3.6 V, AGND = 0 V, RL= 32 Ω + 15 Ω, Tamb = 25° C

(unless otherwise specified) (continued)

Symbol

Parameter

Min.

Typ.

Max.

Unit

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