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BTA08F Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

Part # BTA08F
Description  Triac in a TO-220F Plastic Package
PDF  8 Pages
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Manufacturer  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Direct Link  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

BTA08F Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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BTA08F
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 8
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Repetitive peak off-state voltages
VDRM/VRRM
600 and 800
V
RMS on-state current(full sine wave
TC=105℃)
IT(RMS)
8.0
A
Non repetitive surge peak on-state
current(full cycle, Tj initial=25°C)
ITSM(F=50Hz
t=20ms)
80
A
Non repetitive surge peak on-state
current(full cycle, Tj initial=25°C)
ITSM(F=60Hz
t=16.7ms)
84
A
I2t Value for fusing
I2t(tp=10ms)
36
A2s
Critical rate of rise of on-state current IG
=2xIGT tr ≤100 ns（F=120Hz Tj=125℃）
dI/dt
50
A/μs
Peak gate current(tp =20μs Tj=125℃)
IGM
4.0
A
Average gate power dissipation(Tj=125℃)
PG(AV)
1.0
W
Operating junction temperature range
Tj
-40～125
℃
Storage junction temperature range
Tstg
-40～150
℃
Junction to ambient
Rth(j-a)
60
/W
℃
Junction to case (AC)
Rth(j-c)
2.5
/W
℃
符号
Symbol
测试条件
Test Conditions
信号区
Quadrant
BTA08F
单位
Unit
TW
SW
CW
BW
IGT
(1)
VD=12V RL=30Ω
I-II-III
Max.
5
10
35
50
mA
VGT
VD=12V RL=30Ω
I-II-III
Max.
1.3
V
VGD
VD=VDRM RL=3.3KΩ
Tj=125℃
I-II-III
Min.
0.2
V
IH
(2)
IT=100mA
Max.
10
15
35
50
mA
IL
IG=1.2IGT
I-III
Max.
10
25
50
70
mA
II
15
30
60
80
(dV/dt)(2)
VD=67% VDRM gate open Tj=125℃
Min.
20
40
400
1000
V/μs
(dI/dt)c(2)
(dV/dt)c=0.1V/μs Tj=125℃
Min.
3.5
5.4
-
-
A/m s
(dV/dt)c=10V/μs Tj=125℃
Min.
1.5
2.98
-
-
Without snubber Tj=125℃
Min.
-
-
4.5
7
Note 1：minimum IGT is guaranted at 5% of IGT max.
Note 2：for both polarities of A2 referenced to A1.
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)
免缓冲器和逻辑电平（3象限） / Snubberless and logic level（3 quadrants)



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