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AST54S Datasheet(PDF) 25 Page - Advanced Semiconductor Business Inc.

Part # AST54S
Description  High Gain, Low Noise Amplifier
PDF  26 Pages
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Manufacturer  ASB [Advanced Semiconductor Business Inc.]
Direct Link  http://www.asb.co.kr
Logo ASB - Advanced Semiconductor Business Inc.

AST54S Datasheet(HTML) 25 Page - Advanced Semiconductor Business Inc.

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ASB Inc.
 sales@asb.co.kr  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
Anode
http://www.asb.co.kr
EB-363-D3
Cathode
GND
ASB Inc.
GND
+Vdevice
Photodiode
+Vdiode
Anode
http://www.asb.co.kr
EB-363-D3
Cathode
GND
ASB Inc.
GND
+Vdevice
Photodiode
+Vdiode
1) OIP3 is measured with two tones at an output power of -12 dBm/tone separated by 1MHz.
2) OIP3 is measured with two tones at an output power of -16 dBm/tone separated by 1MHz.
3) OIP3 is measured with two tones at an output power of -18 dBm/tone separated by 1MHz.
4) OIP3 is measured with two tones at an output power of -20 dBm/tone separated by 1MHz.
Parameter
Symbol
Unit
Frequency (MHz)
50
200
950
2150
2500
Power Gain
Gp
dB
18.9
17.1
15.3
14.9
17.5
Output Return Loss
RLout
dB
-10
-4
-6
-5
-9
EIN
EIN
pA/rtHz
8.2
6.0
5.8
5.1
8.5
3rd Intercept Point
Output Power1)
OIP3
dBm
161)
161)
122)
73)
34)
Circuit Current
Id
mA
30
Schematic
S-parameters
APPLICATION CIRCUIT
Trans-impedance Amplifier
50
50 ~ 2500 MHz
+5 V
Board Layout (FR4, 24x16 mm2, 0.8T)
AST54S
RF OUT
Vsupply=+5 V
Vdiode=+5 V
R6=0
R7=0
R8=200
R9=200
C7=1
F
L1=180 nH
L2=120 nH
R2=5.1 k
R1=750
R4=62
C6=10 nF
C1=1 nF
C2=1 nF
C3=1 nF
R5=8.2
R3=560
L5=5.6 nH
C4=0.5 pF
C8=10
F
L3
(BLM15HD182SN)
L4
(BLM15HD182SN)
C5=1 nF
(Coil Inductor)
(Coil Inductor)
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
25
30
Frequency (MHz)
0
500
1000
1500
2000
2500
3000
-20
-15
-10
-5
0
Frequency (MHz)



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