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2N7002D Datasheet(PDF) 2 Page - Chip Integration Technology Corporation

Part # 2N7002D
Description  60V N-Channel MOSFET
PDF  6 Pages
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Manufacturer  CITC [Chip Integration Technology Corporation]
Direct Link  http://www.citcorp.com.tw/english/index.php
Logo CITC - Chip Integration Technology Corporation

2N7002D Datasheet(HTML) 2 Page - Chip Integration Technology Corporation

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Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Symbol
Parameter
Limit
Min.
Typ.
Max. Unit
BV
Drain-Source Breakdown Voltage
V
=0, I =10uA
60
-
-
V
DSS
GS
D
V
Gate Threshold Voltage
V
=V
, I =250uA
1.0
-
2.5
V
GS(th)
DS
GS
D
g
Forward Transconductance
V
=15V, I =250mA
100
-
-
mS
fs
DS
D
I
Gate Body Leakage
V
= 20V , V
GSS
GS
I
Zero Gate Voltage Drain Current
V
=60V, V
=0V
-
-
1
uA
DSS
DS
GS
V
=10V, I =500mA
-
-
3
GS
D
Ω
V
=4.5V, I =200mA
-
-
4
R
Drain-Source On-State Resistance
GS
D
DS(ON)
Dynamic
-
-
I =200mA , V
=15V
D
DS
Q
Total Gate Charge
-
-
0.8
nC
g
V
=4.5V
GS
T
Turn-on Time
-
-
20
d(on)
V
=30V , R =150Ω,
DD
L
I =200mA , V
=10V
nS
D
GEN
T
Turn-off Time
-
-
40
d(off)
R =10Ω
G
C
Input Capacitance
-
-
35
iss
C
Output Capacitance
-
-
10
oss
V
=0V
GS
V
=25V
pF
DS
f=1.0MHz
C
Reverse Transfer Capacitance
-
-
5
rss
Source-Drain Diode
Symbol
Parameter
Limit
Min.
Typ. Max. Unit
V
Diode Forward Voltage
I =200mA, V
=0V
-
0.82
1.3
V
SD
S
GS
2N7002D
Document ID : DS-22M85
Revised Date : 2017/08/14
Revision : C
Chip Integration Technology Corporation
=0V
-
-
±10
uA
DS
VGS=3V, ID=10mA
4.5
±
Notes : 1.Maximum DC current imited by the package.
2.Surface mounted on Fr4 board, t ≦ 5sec.
60V N-Channel MOSFET



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