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2N7002D Datasheet(PDF) 1 Page - Chip Integration Technology Corporation |
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2N7002D Datasheet(HTML) 1 Page - Chip Integration Technology Corporation |
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1 / 6 page  1 2N7002D 60V N-Channel MOSFET Document ID : DS-22M85 Revised Date : 2017/08/14 Revision : C N-Channel MOSFET – ESD Protected GENERAL DESCRIPTION The 2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. (SOT-23) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol Ratings Unit Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 300 mA D Pulsed Drain Current (Note 1) I 2000 mA DM P @T =25?C 0.35 D A Maximum Power Dissipation W P @T =75?C 0.21 D A Operating Junction and Storage Temperature Range T , Tstg -55 ~ 150 ℃ J Junction-to-Ambient Thermal Resistance R 357 ℃/W θJA (PCB mounted) (Note 2) ● Simple Drive Requirement ● Small Package Outline ● ROHS Compliant ● ESD Rating = 2000V HBM ● High density cell design for low RDS(ON) ● Voltage controlled small signal switching. ● Rugged and reliable. ● High saturation current capability. Features: Applications: Chip Integration Technology Corporation ± ● High-speed switching. ● Not thermal runaway. ● The soldering temperature and time shall not exceed 260℃ for more than 10 seconds. |
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