74HC2G66DP datasheet(2/20 Pages) PHILIPS

2 / 20 page

2004 May 19

Philips Semiconductors

Product speciﬁcation

Bilateral switches

74HC2G66; 74HCT2G66

FEATURES

• Wide supply voltage range from 2.0 V to 9.0 V

• Very low ON-resistance:

–41

Ω (typical) at VCC = 4.5 V

–30

Ω (typical) at VCC = 6.0 V

–21

Ω (typical) at VCC = 9.0 V.

• High noise immunity

• Low power dissipation

•± 25 mA switch current

• SOT505-2 package

• ESD protection:

HBM EIA/JESD22-A114-A exceeds 2000 V

MM EIA/JESD22-A115-A exceeds 200 V.

• Specified from −40 °C to +85 °C and

−40 °C to +125 °C.

DESCRIPTION

The 74HC2G66/74HCT2G66 is a high-speed Si-gate

CMOS device.

The 74HC2G66/74HCT2G66 provides a dual analog

switch. Each switch has two pins (nY and nZ) for input or

output and an active HIGH enable input (pin E). When

pin E is LOW, the belonging analog switch is turned off.

QUICK REFERENCE DATA

GND = 0 V; Tamb =25 °C; tr =tf = 6.0 ns; Vos is the output voltage at pins nY or nZ, whichever is assigned as an output.

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi +(CL +CS) × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

CS = Switch capacitance in pF;

VCC = supply voltage in Volts.

2. For 74HC2G66 the condition is VI = GND to VCC.

For 74HCT2G66 the condition is VI = GND to VCC − 1.5 V.

SYMBOL

PARAMETER

CONDITIONS

TYPICAL

UNIT

HC2G

HCT2G

tPZH/tPZL

turn-on time nE to Vos

CL = 50 pF; RL =1kΩ;VCC = 4.5 V 12

tPHZ/tPLZ

turn-off time nE to Vos

CL = 50 pF; RL =1kΩ;VCC = 4.5 V 12

input capacitance

3.5

CPD

power dissipation capacitance per switch notes 1 and 2

switch capacitance

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