TMS416809, TMS417809

2097152-WORD BY 8-BIT HIGH-SPEED DRAMS

SMKS885A – DECEMBER 1995 – REVISED MARCH 1996

9

POST OFFICE BOX 1443

electrical characteristics over recommended ranges of supply voltage and operating free-air

temperature (unless otherwise noted) (continued)

TMS417809

PARAMETER

TEST CONDITIONS†

’417809 - 60

’417809 - 70

’417809 - 80

UNIT

PARAMETER

TEST CONDITIONS†

MIN

MAX

MIN

MAX

MIN

MAX

UNIT

VOH

High-level output

voltage

IOH = – 5 mA

2.4

2.4

2.4

V

VOL

Low-level output

voltage

IOL = 4.2 mA

0.4

0.4

0.4

V

II

Input current (leakage)

VCC = 5.5 V,

VI = 0 V to 6.5 V,

All others = 0 V to VCC

± 10

± 10

± 10

µA

IO

Output current

(leakage)

VCC = 5.5 V,

VO = 0 V to VCC,

CAS high

± 10

± 10

± 10

µA

ICC1‡§

Read- or write-cycle

current

VCC = 5.5 V,

Minimum cycle

110

100

90

mA

ICC2

Standby current

VIH = 2.4 V ( TTL),

After 1 memory cycle,

RAS and CAS high

2

2

2

mA

ICC2

Standby current

VIH = VCC – 0.2 V (CMOS),

After 1 memory cycle,

RAS and CAS high

1

1

1

mA

ICC3‡§

Average refresh

current (RAS-only

refresh or CBR)

VCC = 5.5 V,

Minimum cycle,

RAS cycling,

CAS high (RAS only),

RAS low after CAS low (CBR)

110

100

90

mA

ICC4ঠAverage EDO current

VCC = 5.5 V,

tHPC = MIN,

RAS low,

CAS cycling

90

80

70

mA

† For conditions shown as MIN / MAX, use the appropriate value specified in the timing requirements.

‡ Measured with outputs open

§ Measured with a maximum of one address change while RAS = VIL

¶ Measured with a maximum of one address change while CAS = VIH