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FDMF8811 Datasheet(PDF) 9 Page - ON Semiconductor |
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FDMF8811 Datasheet(HTML) 9 Page - ON Semiconductor |
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9 / 19 page ![]() FDMF8811 www.onsemi.com 8 TYPICAL CHARACTERISTICS Figure 7 Forward Bias Safe Operating Area Figure 8 Normalized on Resistance vs. Drain Current and Gate Voltage Figure 9 Normalized on Resistance vs. Temperature Figure 10 On Resistance vs. Gate to Source Voltage Figure 11 Single Pulse Maximum Power Dissipation Figure 12 Junction to Ambient Transient Thermal 0.1 1 10 100 1000 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) 100ms R DS(ON) LIMIT SINGLE PULSE RqJC = 2.24 oC/W T C = 25 oC, VGS=10V 10ms 1ms 100us 10us 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 10 20 30 40 50 60 70 80 90 100 110 I D, DRAIN CURRENT (A) V GS = 6V V GS = 14V V GS = 12V V GS = 10V V GS = 8V 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE ( oC) I D = 16A V GS = 10V 0 5 10 15 20 25 30 4 6 8 10 12 14 V GS, GATE TO SOURCE VOLTAGE (V) I D = 16A T J = 125 oC T J = 25 oC 10 100 1000 10000 1E-05 0.0001 0.001 0.01 0.1 1 pw FDMF8811 t, PULSE WIDTH (sec) SINGLE PULSE RqJC = 2.24 oC/W T C = 25 oC 0.001 0.01 0.1 1 10 1E-05 0.0001 0.001 0.01 0.1 1 t, RECTANGULAR PULSE DURATION (sec) TRANSIENT THERMAL IMPEDANCE Single 0.5 0.2 0.1 0.05 0.02 0.01 FDMF8811 |
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