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FDMF8811 Datasheet(PDF) 13 Page - ON Semiconductor

Part # FDMF8811
Description  High Performance 100V Bridge Power Stage Module
PDF  19 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMF8811 Datasheet(HTML) 13 Page - ON Semiconductor

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FDMF8811
www.onsemi.com
12
refers to VDD power supply at primary side and
“VDD_SS” refers to VDD power supply at secondary
side.
VDD_PS
VDD_SS
CTRL
PWM
VOUT
PWM forbidden zone
> 5ms
Figure 22 VDD power supply timing sequence during
start up
A correct timing sequence is also required when
powering down a DC-DC conversion system to avoid
overstress or even damage of the components in the
system. It is highly recommended to configure the power
system to have more than 5 milliseconds time margin
between the event that the controller pulls down PWM
signals and the event the driver power supplies are turn
off. The PWM forbidden region illustrated in Figure 23
suggests no PWM signal 5 milliseconds before VDD
power supplies starts to lose regulation.
VDD_PS
VDD_SS
CTRL
PWM
VOUT
PWM forbidden zone
> 5ms
Figure 23 VDD power supply timing sequence during
power down
PCB Layout Guideline
There are several loops with the high frequency pulsing
current, including the input voltage loop and two gate
driver loops. It is critical to keep the loop impedance as
low as possible. All of the high current paths, such as
VIN, SW and PGND, should be short and wide for low
parasitic inductance and resistance. This helps achieve a
more stable and evenly distributed current flow, along
with enhanced heat radiation and system performance.
Input ceramic bypass capacitors must be close to the
VIN and PGND pins. This reduces the high-current
power loop inductance and the input current ripple
induced by the power MOSFET switching operation.
The SW copper trace serves two purposes. In addition to
being the high-frequency current path from the
FDMF8811 package to the output inductor, it serves as a
heat sink for the low-side MOSFET in the FDMF8811
package. The trace should be short and wide enough to
present a low-impedance path for the high-frequency,
high-current flow between the FDMF8811 and inductor.
The short and wide trace minimizes electrical losses as
well as the FDMF8811 temperature rises.
Note that the SW node is a high-voltage and high-
frequency switching node with high noise potential. Care
should be taken to minimize coupling to adjacent traces.
Since this copper trace acts as a heat sink for the low-
side MOSFET, balance using the largest area possible to
improve FDMF8811 cooling while maintaining
acceptable noise emission.
An output inductor should be located close to the
FDMF8811 to minimize the power loss due to the SW
copper trace. Care should also be taken so the inductor
dissipation does not heat the FDMF8811.
PowerTrench® MOSFETs are used in the output stage
and are effective at minimizing ringing due to fast
switching. In most cases, no R&C snubber on SW node
is required. If a snubber is used, it should be placed close
to the SW and PGND pins.
The board layout should include a placeholder for small-
value series boot resistor in series to the BOOT
capacitor. The boot-loop size, including series RBOOT
and CBOOT, should be as small as possible.
The boot resistor may be required when there is large
ringing at SW pin, and it is effective to control the high-
side MOSFET turn-on slew rate and SW voltage
overshoot. RBOOT can improve noise operating margin
if there is large switching noise due to ground bounce or
high positive and negative SW ringing. Inserting a boot
resistance lowers the FDMF8811 module efficiency.
Efficiency versus switching noise trade-offs must be
considered.
The VIN and PGND pins handle large current transients
with frequency components greater than 100MHz. If
possible, these pins should be connected directly to the
VIN and board GND planes. The use of thermal relief
traces in series with these pins is not recommended since
this adds extra parasitic inductance to the power path.
This added inductance in series with either the VIN or
PGND pin degrades system noise immunity by
increasing positive and negative SW ringing.
PGND pad and pins should be connected to the GND
copper plane with multiple vias for stable grounding.
Poor grounding can create a noise transient offset



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