PMV60EN datasheet(5/12 Pages) PHILIPS

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Philips Semiconductors

PMV60EN

µTrenchMOS™ enhanced logic level FET

Product data

Rev. 01 — 15 January 2003

5 of 12

9397 750 10895

Characteristics

Table 4:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 250 µA; VGS =0V

Tj =25 °C

--V

Tj = −55 °C

--V

VGS(th)

gate-source threshold voltage

ID = 1 mA; VDS =VGS; Figure 9

Tj =25 °C1

Tj = 150°C

0.6

Tj = −55°C

2.2

IDSS

drain-source leakage current

VDS =30V; VGS =0V

Tj =25 °C

--1

µA

Tj = 150 °C

100

µA

IGSS

gate-source leakage current

VGS = ±20 V; VDS = 0 V

100

RDSon

drain-source on-state resistance

VGS = 10 V; ID =2A; Figure 7 and 8

Tj =25 °C

Ω

Tj = 150 °C

79.9

93.5

Ω

VGS = 4.5 V; ID = 1.5 A; Figure 7

6072m

Ω

Dynamic characteristics

Qg(tot)

total gate charge

ID = 3 A; VDD =15V; VGS =10V; Figure 13

9.4

Qgs

gate-source charge

1.2

Qgd

gate-drain (Miller) charge

1.9

Ciss

input capacitance

VGS =0V; VDS = 30 V; f = 1 MHz; Figure 11

350

Coss

output capacitance

Crss

reverse transfer capacitance

td(on)

turn-on delay time

VDD =15V; RL =15 Ω; VGS =10V; RG =6 Ω

-5

-ns

rise time

-7

-ns

td(off)

turn-off delay time

fall time

5.5

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 1.5 A; VGS =0V; Figure 12

0.79

1.2

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