Philips Semiconductors

PMV60EN

µTrenchMOS™ enhanced logic level FET

Product data

Rev. 01 — 15 January 2003

4 of 12

9397 750 10895

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

4.

Thermal characteristics

4.1 Transient thermal impedance

Table 3:

Thermal characteristics

Symbol Parameter

Conditions

Min Typ Max Unit

thermal resistance from junction to solder point Figure 4

--60

K/W

Fig 4.

Transient thermal impedance from junction to solder point as a function of pulse duration.

03ak68

1

10

102

10-4

10-3

10-2

10-1

1

10

tp (s)

Zth(j-sp)

(K/W)

single pulse

δ = 0.5

0.2

0.1

0.05

0.02

tp

tp

T

P

t

T

δ =