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MP4006 Datasheet(PDF) 6 Page - Toshiba Semiconductor

Part # MP4006
Description  Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)
PDF  7 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MP4006 Datasheet(HTML) 6 Page - Toshiba Semiconductor

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MP4006
2002-11-20
6
Collector-emitter voltage VCE (V)
Safe Operating Area (NPN Tr)
rth – tw
Pulse width tw (s)
Ambient temperature Ta (°C)
PT – Ta
Total power dissipation PT (W)
∆Tj – PT
Collector-emitter voltage VCE (V)
Safe Operating Area (NPN Tr)
0
8
40
2
4
6
80
120
160
200
0
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Attached on a circuit board
Circuit board
(4)
(3)
(2)
(1)
1
2
3
4
0
160
40
80
120
5
0
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
(1)
(2)
(3)
(4)
0.03
1
3
5
10
30
50
100
300
0.05
0.1
0.3
0.5
1
3
5
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (pulsed)*
10 ms*
1 ms*
100 µs*
VCEO max
−0.03
−1
−3
−5
−10
−30 −50
−100
−300
−0.05
−0.1
−0.3
−0.5
−1
−3
−5
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (pulsed)*
10 ms*
1 ms*
100 µs*
VCEO max
0.001
0.01
0.1
1
10
100
0.5
1
3
10
30
100
Curves should be applied in thermal
limited area (single nonrepetitive pulse)
Below figure show thermal resistance per
1 unit versus pulse width.
-No heat sink and attached on a circuit board-
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
(3)
(2)
(1)
NPN
PNP
(4)
1000



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