MP4006

2002-11-20

1

TOSHIBA Power Transistor Module

Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)

MP4006

High Power Switching Applications.

Hammer Drive, Pulse Motor Drive and Inductive Load

Switching.

· Small package by full molding (SIP 10 pin)

· High collector power dissipation (4 devices operation)

Rating

Characteristics

Symbol

NPN

PNP

Unit

Collector-base voltage

80

−80

V

Collector-emitter voltage

80

−80

V

Emitter-base voltage

8

−8

V

DC

2

−2

Collector current

Pulse

3

−3

A

Continuous base current

0.5

−0.5

A

Collector power dissipation

(1 device operation)

2.0

W

Collector power dissipation

(4 devices operation)

4.0

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Array Configuration

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-25A1B

Weight: 2.1 g (typ.)

7

2

10

R1 R2

4

9

1

R1 ≈ 4 kΩ R2 ≈ 800 Ω

8

6

5

R1 R2

3