MP4006 datasheet(3/7 Pages) TOSHIBA

Part #	MP4006

Description	Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

MP4006

2002-11-20

Electrical Characteristics (Ta = 25°C) (PNP transistor)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = −80 V, IE = 0 A

―

−10

µA

Collector cut-off current

ICEO

VCE = −80 V, IB = 0 A

―

−10

µA

Emitter cut-off current

IEBO

VEB = −8 V, IC = 0 A

−0.8

―

−4.0

Collector-base breakdown voltage

V (BR) CBO

IC = −1 mA, IE = 0 A

−80

―

Collector-emitter breakdown voltage

V (BR) CEO

IC = −10 mA, IB = 0 A

−80

―

DC current gain

hFE

VCE = −2 V, IC = −1 A

2000

―

Collector-emitter

VCE (sat)

IC = −1 A, IB = −1 mA

―

−1.5

Saturation voltage

Base-emitter

VBE (sat)

IC = −1 A, IB = −1 mA

―

−2.0

Transition frequency

VCE = −2 V, IC = −0.5 A

―

MHz

Collector output capacitance

Cob

VCB = −10 V, IE = 0 A, f = 1 MHz

―

Turn-on time

ton

―

0.4

―

Storage time

tstg

―

2.0

―

Switching time

Fall time

−IB1 = IB2 = 1 mA, duty cycle ≤ 1%

―

0.4

―

µs

VCC = −30 V

Output

IB1

IB2

Input

20 µs

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