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Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

DSS

V

GS

= 0 V, I

500

V

BV

0.087

%/K

V

GS(th)

V

DS

= V

GS

,

I

2.0

4.0

V

V

-0.25

%/K

I

GSS

V

GS

=

±20 V DC, V

±100

nA

I

DSS

V

DS

= 0.8 V

DSS

T

200

µA

V

GS

= 0 V

T

3

mA

R

DS(on)

V

GS

= 10 V, I

0.17

Ω

Symbol

Test conditions

Maximum ratings

V

DSS

T

J

= 25°C to 150°C

500

V

V

DGR

T

J

= 25°C to 150°C; R

500

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

C

= 25°C

33

A

I

DM

T

C

= 25°C, pulse width limited by T

JM

132

A

P

D

T

C

= 25°C

416

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

Mounting torque

1.13/10 Nm/lb.in.

Weight

10

g

Max lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

N-Channel Enhancement Mode

S

G

D

G = Gate

D = Drain

S = Source

TAB = Drain

TO-264 AA

95513C (4/97)

Features

• Low R

• Rugged polysilicon gate cell

structure

• International standard package

• Fast switching times

Applications

• Motor controls

• DC choppers

• Uninterruptable Power Supplies

(UPS)

• Switch-mode and resonant-mode

Advantages

• Easy to mount with one screw

(isolated mounting screw hole)

• Space savings

• High power density

Preliminary data

D (TAB)

IXTK 33N50

V

DSS

= 500 V

I

R

Ω

Ω

Ω

Ω

High Current

IXYS reserves the right to change limits, test conditions, and dimensions.