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TSM8568CS Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM8568CS Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 11 page  TSM8568CS Taiwan Semiconductor 2 Version: B1611 ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYPE MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS N-ch 30 -- -- V VGS = 0V, ID = -250µA P-ch -30 -- -- Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) N-ch 1 1.4 2.5 V VGS = VDS, ID = -250µA P-ch -1 -1.7 -2.5 Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS N-ch -- -- ±100 nA VGS = ±25V, VDS = 0V P-ch -- -- ±100 nA Drain-Source Leakage Current VGS = 0V, VDS = 30V IDSS N-ch -- -- 1 µA VGS = 0V, VDS = 30V TJ = 125°C -- -- 100 VGS = 0V, VDS = -30V P-ch -- -- -1 VGS = 0V, VDS = -30V TJ = 125°C -- -- -100 Drain-Source On-State Resistance (Note 3) VGS = 10V, ID = 8A RDS(on) N-ch -- 10 16 m Ω VGS = 4.5V, ID = 8A -- 13 20 VGS = -10V, ID = -7A P-ch -- 18 24 VGS = -4.5V, ID = -7A -- 30 37 Forward Transconductance (Note 3) VDS = 5V, ID = 8A gfs N-ch -- 26 -- S VDS = -5V, ID = -7A P-ch -- 16 -- Dynamic (Note 4) Total Gate Charge N-ch VDS = 15V, ID = 8A P-ch VDS = -15V, ID = -7A Qg(VGS=10V) N-ch -- 14 -- nC P-ch -- 21.5 -- Total Gate Charge Qg(VGS=4.5V) N-ch -- 7 -- P-ch -- 11 -- Gate-Source Charge Qgs N-ch -- 1.7 -- P-ch -- 3.4 -- Gate-Drain Charge Qgd N-ch -- 3.7 -- P-ch -- 5.3 -- Input Capacitance N-ch VGS = 0V, VDS = 15V f = 1.0MHz P-ch VGS = 0V, VDS = -15V f = 1.0MHz Ciss N-ch -- 646 -- pF P-ch -- 1089 -- Output Capacitance Coss N-ch -- 108 -- P-ch -- 190 -- Reverse Transfer Capacitance Crss N-ch -- 70 -- P-ch -- 119 -- Gate Resistance f = 1.0MHz Rg N-ch 0.9 3 6 Ω P-ch 3.6 12 24 |
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