TSM8568CS datasheet(1/11 Pages) TSC

Part #	TSM8568CS

Description	N- and P-Channel 30V (D-S) Power MOSFET

PDF	11 Pages

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Manufacturer	TSC [Taiwan Semiconductor Company, Ltd]

Direct Link	http://www.taiwansemi.com

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TSM8568CS

Taiwan Semiconductor

1

Version: B1611

N- and P-Channel 30V (D-S) Power MOSFET

FEATURES

● Low R

DS(ON) to minimize conductive losses

● Low gate charge for fast power switching

● 100% UIS and R

g tested

● Compliant to RoHS directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● DC-DC Converters

● Power Routing

● Motor Drives

KEY PERFORMANCE PARAMETERS

PARAMETER

TYPE

VALUE

UNIT

VDS

N-ch

30

V

P-ch

-30

RDS(on)

(max)

VGS = 10V

N-ch

16

m

Ω

VGS = 4.5V

20

VGS = -10V

P-ch

24

VGS = -4.5V

37

Qg

N-ch

7

nC

P-ch

11

SOP-8

Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T

A = 25°C unless otherwise noted)

PARAMETER

SYMBOL

N-ch

P-ch

UNIT

Drain-Source Voltage

VDS

30

-30

V

Gate-Source Voltage

VGS

±20

±25

V

Continuous Drain Current

(Note 1)

TC = 25°C

ID

15

13

A

TA = 25°C

8

7

Pulsed Drain Current

IDM

60

52

A

Single Pulse Avalanche Current

(Note 2)

IAS

12

18

A

Single Pulse Avalanche Energy

(Note 2)

EAS

21.6

48.6

mJ

Total Power Dissipation

TC = 25°C

PD

6

W

TC = 125°C

1.2

Total Power Dissipation

TA = 25°C

PD

1.6

W

TA = 125°C

0.3

Operating Junction and Storage Temperature Range

TJ, TSTG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Thermal Resistance

– Junction to Case

RӨJC

21

°C/W

Thermal Resistance

– Junction to Ambient

RӨJA

78

Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is

determined by the user’s board design.

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