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SCA-3 Datasheet(PDF) 1 Page - Stanford Microdevices |
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SCA-3 Datasheet(HTML) 1 Page - Stanford Microdevices |
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1 / 6 page ![]() The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 1 http://www.stanfordmicro.com Phone: (800) SMI-MMIC 522 Almanor Ave., Sunnyvale, CA 94085 EDS-101392 Rev A Preliminary Preliminary Product Description 10 11 12 13 14 15 16 012 34 56 Stanford Microdevices SCA-3 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 850 MHz with 65mA is 32.8 dBm. These unconditionally stable amplifiers provide 13.7 dB of gain and 17.3 dBm of 1dB compressed power and require only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation. This MMIC is an ideal choice for wireless applica- tions such as cellular, PCS, CDPD, wireless data and SONET. SCA-3 DC-5 GHz, Cascadable GaAs HBT MMIC Amplifier NGA-489 Recommended for New Designs Product Features High Output IP3: 32.8 dBm @ 850 MHz Cascadable 50 Ohm Gain Block Patented GaAs HBT Technology Operates From Single Supply Applications Cellular, PCS, CDPD, Wireless Data, SONET Electrical Specifications GHz l o b m y S : s n o it i d n o C t s e T : s r e t e m a r a P Z 0 I , s m h O 0 5 = D C ° 5 2 = T , A m 5 6 = s ti n U . n i M . p y T . x a M P B d 1 n o i s s e r p m o C B d 1 t a r e w o P t u p t u O z H M 0 5 8 = f z H M 0 5 9 1 = f z H M 0 0 4 2 = f m B d m B d m B d 3 . 7 1 6 . 7 1 4 . 7 1 P I 3 t n i o P t p e c r e t n I r e d r O d ri h T m B d 0 = e n o t r e p t u o r e w o P z H M 0 5 8 = f z H M 0 5 9 1 = f z H M 0 0 4 2 = f m B d m B d m B d 8 . 9 28 . 2 3 3 . 0 3 1 . 9 2 S 1 2 n i a G l a n g i S ll a m S z H M 0 5 8 = f z H M 0 5 9 1 = f z H M 0 0 4 2 = f B d B d B d 3 . 2 17 . 3 1 6 . 3 1 6 . 3 1 h t d i w d n a BS y b d e n i m r e t e D ( 1 1 S , 2 2 ) s e u l a Vz H M0 0 0 5 S 1 1 R W S V t u p n Iz H M 0 0 0 5 - C D = f- 1 : 7 . 1 S 2 2 R W S V t u p t u Oz H M 0 0 0 5 - C D = f- 1 : 5 . 1 S 2 1 n o it a l o s I e s r e v e R z H M 0 5 8 = f z H M 0 5 9 1 = f z H M 0 0 4 2 = f B d B d B d 3 . 8 1 4 . 8 1 4 . 8 1 F NZ , e r u g i F e s i o N S s m h O 0 5 =z H M 0 5 9 1 = fB d6 . 5 V D e g a tl o V e c i v e DV 4 . 49 . 44 . 5 l- j, h t R) d a e l - n o it c n u j( e c n a t s i s e R l a m r e h T o W / C4 2 2 dB Small Signal Gain vs. Frequency @ I D=65mA Frequency (GHz) |
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