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PALCE26V12 Datasheet(PDF) 16 Page - Advanced Micro Devices |
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PALCE26V12 Datasheet(HTML) 16 Page - Advanced Micro Devices |
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16 / 21 page ![]() AMD 2–321 PALCE26V12 Family ENDURANCE CHARACTERISTICS The PALCE26V12 is manufactured using AMD’s ad- vanced Electrically Erasable process. This technology uses an EE cell to replace the fuse link used in bipolar parts. As a result, the device can be erased and reprogrammed—a feature which allows 100% testing at the factory. Symbol Parameter Test Conditions Min Unit tDR Min Pattern Data Retention Time Max Storage Temperature 10 Years Max Operating Temperature 20 Years N Min Reprogramming Cycles Normal Programming Conditions 100 Cycles |
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