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TMS44409 Datasheet(PDF) 6 Page - Texas Instruments

Part # TMS44409
Description  1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY
PDF  26 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS44409 Datasheet(HTML) 6 Page - Texas Instruments

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TMS44409, TMS44409P
1048576-WORD BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORY
SMHS563 – JULY1995
6
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
’44409-60
’44409P-60
’44409-70
’44409P-70
’44409-80
’44409P-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
VOH
High-level output
voltage
IOH = – 5 mA
2.4
2.4
2.4
V
VOL
Low-level output
voltage
IOL = 4.2 mA
0.4
0.4
0.4
V
II
Input current
(leakage)
VCC = 5.5 V,
VI = 0 V to 6.5 V,
All other pins = 0 V to VCC
± 10
± 10
± 10
mA
IO
Output current
(leakage)
VCC = 5.5 V,
VO = 0 V to 6.5 V,
CAS high
± 10
± 10
± 10
µA
ICC1 †
Read- or write-cycle
current (see Note 3)
VCC = 5.5 V,
tRWC = MIN
105
90
80
mA
After 1 memory cycle,
TTL
2
2
2
mA
ICC2
Standby current
After 1 memory cycle,
RAS and CAS high,
CMOS
’44409
1
1
1
mA
VIH = 2.4 V
CMOS
’44409P
500
500
500
µA
ICC3
Average refresh
current
(RAS only or CBR)
(see Note 3)
VCC = 5.5 V,
tRWC = MIN,
RAS cycling,
CAS high (RAS only);
RAS low after CAS low (CBR)
105
90
80
mA
ICC4 †
Average EDO page
current (see Note 4)
VCC = 5.5 V,
tHPC = MIN,
RAS low,
CAS cycling
90
80
70
mA
ICC6‡
Self-refresh current
CAS, RAS
<0.2 V,
Measured after tRASS min
500
500
500
µA
ICC7 †
Standby current
RAS = VIH,
CAS = VIL ,
Data out = enabled
5
5
5
mA
ICC10‡
Battery-backup
current
tRC = 125 µs,
tRAS ≤ 1 µs,
VCC – 0.2 V ≤ VIH ≤ 6.5 V,
0 V
≤ VIL ≤ 0.2 V, W and OE = VIH,
Addresses and data stable
500
500
500
µA
† Measured with outputs open
‡ TMS44409P only
NOTES:
3. Measured with a maximum of one address change while RAS = VIL
4. Measured with a maximum of one address change while CAS = VIH
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 5) §
PARAMETER
MIN
MAX
UNIT
Ci(A)
Input capacitance, A0 – A9
5
pF
Ci(OE)
Input capacitance, OE
7
pF
Ci(RC)
Input capacitance, CAS and RAS
7
pF
Ci(W)
Input capacitance, W
7
pF
Co
Output capacitance
7
pF
§ Capacitance measurements are made on a sample basis only.
NOTE 5: VCC = 5 V ± 0.5 V, and the bias on pins under test is 0 V.



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