TMS44409, TMS44409P

1048576-WORD BY 4-BIT

DYNAMIC RANDOM-ACCESS MEMORY

SMHS563 – JULY1995

1

POST OFFICE BOX 1443

ACCESS

ACCESS

ACCESS

EDO

TIME

TIME

TIME

CYCLE

(tRAC)(tCAC)(tAA)(tHPC)

(MAX)

(MAX)

(MAX)

(MIN)

’44409 / P-60 60 ns

15 ns

30 ns

25 ns

’44409 / P-70 70 ns

18 ns

35 ns

30 ns

’44409 / P-80 80 ns

20 ns

40 ns

35 ns

TTL-Compatible

– 1 024 Cycle Refresh in 16 ns (max)

– 128 ms on Low Power, Self-Refresh

Version (TMS44409P Only)

0

°C to 70°C

description

The TMS44409 is a high-speed 4 194 304-bit

dynamic random-access memory (DRAM) orga-

nized as 1 048 576 words of four bits each. This

device features maximum RAS access times of

60 ns, 70 ns and 80 ns. Maximum power

consumption is as low as 385 mW operating and

6 mW standby. All inputs and outputs, including

clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system

design. Data out is unlatched to allow greater system flexibility.

The TMS44409P is a high-speed, low-power, self-refresh version of the TMS44409 DRAM.

All versions of the TMS44409 / P are offered in a 300-mil 20 / 26 J-lead plastic surface-mount SOJ package ( DJ

suffix) and a 20 / 26-lead plastic small outline package ( DGA suffix). These devices are characterized for

operation from 0

°C to 70°C.

ADVANCE INFORMATION concerns new products in the sampling or

preproduction phase of development. Characteristic data and other

specifications are subject to change without notice.

26

25

24

23

22

18

17

16

15

14

1

2

3

4

5

9

10

11

12

13

DQ4

DQ3

CAS

OE

A8

A7

A6

A5

A4

DQ1

DQ2

W

RAS

A9

A0

A1

A2

A3

26

25

24

23

22

18

17

16

15

14

1

2

3

4

5

9

10

11

12

13

DQ4

DQ3

CAS

OE

A8

A7

A6

A5

A4

DQ1

DQ2

W

RAS

A9

A0

A1

A2

A3

PIN NOMENCLATURE

A0 – A9

Address Inputs

CAS

Column-Address Strobe

DQ1 – DQ4

Data In / Data Out

OE

Output Enable

RAS

Row-Address Strobe

VCC

5-V Supply

VSS

Ground

W

Write Enable

DJ PACKAGE

( TOP VIEW )

DGA PACKAGE

( TOP VIEW )

Copyright

© 1995, Texas Instruments Incorporated