TMS44409, TMS44409P

1048576-WORD BY 4-BIT

DYNAMIC RANDOM-ACCESS MEMORY

SMHS563 – JULY1995

9

POST OFFICE BOX 1443

timing requirements over recommended ranges of supply voltage and operating free-air

temperature (continued)

’44409-60

’44409P-60

’44409-70

’44409P-70

’44409-80

’44409P-80

UNIT

MIN

MAX

MIN

MAX

MIN

MAX

tRSH

Delay time, CAS low to RAS high

10

12

15

ns

tRWD

Delay time, RAS low to W low

85

98

110

ns

tREF

Refresh time interval

’44409

16

16

16

ms

tREF

Refresh time interval

’44409P

128

128

128

ms

tT

Transition time

2

50

2

50

2

50

ms

tWTH

Hold time, write low (test mode)

10

10

10

ns

tCHS

Hold time, CAS low after RAS high ( self refresh ) (TMS44409P only)

– 50

– 50

– 50

ns

tWTS

Setup time, write low (test mode)

10

10

10

ns

tCPS

CAS precharge before self refresh

0

0

0

ns

tRPS

RAS precharge after self refresh

110

130

150

ns

tRASS

Self-refresh entry from RAS low (TMS44409P only)

100

100

100

µs