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TMS44409 Datasheet(PDF) 18 Page - Texas Instruments |
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TMS44409 Datasheet(HTML) 18 Page - Texas Instruments |
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18 / 26 page ![]() TMS44409, TMS44409P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS563 – JULY1995 18 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 PARAMETER MEASUREMENT INFORMATION RAS CAS A0 – A9 W OE DQ1 – DQ4 Row Column 1 Don’t Care Valid In 2 Column 2 tRASP Valid In 1 tRP tCSH tPRWC tRCD tCP tCRP tRSH tASC tCAH tRAD tASR tCWD tRAH tAWD tCWL tRWL tWP tRWD tCPA tOEH tDH tDS tAA tRCS tRAC tCAC tCLZ tOEA tOEZ tOEH tOED tCAS Valid Out 2 See Note A Valid Out 1 tCAL tRAL NOTES: A. Output can go from the high-impedance state to an invalid-data state prior to the specified access time. B. A read or write cycle can be intermixed with read-write cycles as long as the read- and write-timing specifications are not violated. Figure 10. EDO Read-Write-Cycle Timing |
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