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BFP196WN Datasheet(PDF) 9 Page - Infineon Technologies AG |
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BFP196WN Datasheet(HTML) 9 Page - Infineon Technologies AG |
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9 / 19 page ![]() 0.5 0.55 0.6 0.65 0.7 0.75 0.8 V BE [V] 10-7 10-6 10-5 10-4 10-3 10-2 10-1 Figure 5 Collector current IC= f(VBE), VCE = 8 V 0.5 0.55 0.6 0.65 0.7 0.75 0.8 V BE [V] 10-9 10-8 10-7 10-6 10-5 10-4 10-3 Figure 6 Base current IB = f(VBE), VCE = 8 V BFP196WN Low noise silicon bipolar RF transistor Electrical performance in test fixture Preliminary datasheet 9 Revision 1.0 2017-01-20 |
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