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BFP196WN Datasheet(PDF) 10 Page - Infineon Technologies AG |
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BFP196WN Datasheet(HTML) 10 Page - Infineon Technologies AG |
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10 / 19 page ![]() 0 0.5 1 1.5 2 V EB [V] 10-14 10-13 10-12 10-11 10-10 10-9 Figure 7 Base/emitter leakage current IB = f(VEB), VCE = 8 V Note: Regard absolute maximum ratings for IC , VCE and Ptot (see Table 1) BFP196WN Low noise silicon bipolar RF transistor Electrical performance in test fixture Preliminary datasheet 10 Revision 1.0 2017-01-20 |
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